Etude de la quantification de la conductance dans les transistors à effet de champ à grande mobilité électronique

Abstract

The quantum transport of carriers by an external electric field (drain bias) is studied numerically in a typical GaAs/AlGaAs heterojunction High Mobility Field Effect Transistor HEMT as a function of the gate bias. We have shown that when the size of the transistor is reduced to nanometer scale, so that quantum effects become important. The operational characteristics of the transistor are dominated by the conductance quantization effect at infinitely small drain bias and zero temperature. We present in this work a self-consistent numerical solution, using the control Volume Method to show conductance quantization effects.